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A central challenge in quantum networking is transferring quantum states between different physical modalities, such as between flying photonic qubits and stationary quantum memories. One implementation entails using spin–photon interfaces that combine solid-state spin qubits, such as color centers in diamond, with photonic nanostructures. However, while high-fidelity spin–photon interactions have been demonstrated on isolated devices, building practical quantum repeaters requires scaling to large numbers of interfaces yet to be realized. Here, we demonstrate integration of nanophotonic cavities containing tin-vacancy (SnV) centers in a photonic integrated circuit (PIC). Out of a six-channel quantum microchiplet (QMC), we find four coupled SnV-cavity devices with an average Purcell factor of ∼7. Based on system analyses and numerical simulations, we find with near-term improvements this multiplexed architecture can enable high-fidelity quantum state transfer, paving the way toward building large-scale quantum repeaters.

We show enhanced single-photon emission from artificial atoms in silicon by coupling them to cavities with high quality factors and small mode volumes, thus enabling enhanced light-matter interactions which are crucial for quantum technologies.

We demonstrate heterogeneous integration of solid-state nanophotonic cavities into a scalable photonic platform as an efficient optical interface for quantum memories based on diamond color centers.

We demonstrate the integration of superconducting single-photon detectors onto arbitrary photonic substrates via transfer printing. Using this method, we show single-photon detection in a lithium niobate on insulator photonic circuit.

We present an efficient microwave and optical interface for quantum memories at 1.3 K based on tin-vacancy color centers in diamond and scalable integrated photonics.

Linking superconducting quantum devices to optical fibers via microwave-optical quantum transducers may enable large-scale quantum networks. For this application, transducers based on the Pockels electro-optic (EO) effect are promising for their direct conversion mechanism, high bandwidth, and potential for low-noise operation. However, previously demonstrated EO transducers require large optical pump power to overcome weak EO coupling and reach high efficiency. Here, we create an EO transducer in thin-film lithium niobate, a platform that provides low optical loss and strong EO coupling. We demonstrate on-chip transduction efficiencies of up toandof optical pump power. The transduction efficiency can be improved by further reducing the microwave resonator’s piezoelectric coupling to acoustic modes, increasing the optical resonator quality factor to previously demonstrated levels, and changing the electrode geometry for enhanced EO coupling. We expect that with further development, EO transducers in thin-film lithium niobate can achieve near-unity efficiency with low optical pump power.